| 摘要： |
Here we reported the doping of graphdiyne in P3CT-K in MAPbI(3) perovskite solar cells as hole-transport materials. The doping could improve the surface wettability of P3CT-K, and the resulting perovskite morphology was improved with homogeneous coverage and reduced grain boundaries. Simultaneously, it increased the hole-extraction mobility and reduced the recombination as well as improved the performance of devices. Therefore, a high efficiency of 19.5% was achieved based on improved short-circuit current and fill factor. In addition, hysteresis of the J-V curve was also obviously reduced. This work paves the way for the development of highly efficient perovskite solar cells. |
